METHOD OF FORMING GaInNAs LAYER, EPITAXIAL WAFER, SEMICONDUCTOR LASER, HIGH ELECTRON MOBILITY TRANSISTOR, HETEROJUNCTION BIPOLAR TRANSISTOR, AND HIGH-FREQUENCY INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To enable a superior GaInNAs crystal to grow on a substrate. SOLUTION: An undoped GaAs layer 2 is formed on a GaAs substrate 1, and at least, a thallium layer functioning as a surfactant is attached as thick as a monatomic layer on the undoped GaAs layer 2. After the thallium layer is attached, a GaInNAs crystal 3 is grown on the undoped GaAs layer 2.