| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where the occurrence of the high frequency oscillation of gate voltage can be reduced even in a load shorting state or latch-up destruction can be prevented even if gate voltage oscillates. SOLUTION: In an IGBT chip 1 operating as the semiconductor device, multiple unit cells 6 are formed. The unit cell 6 includes a unit cell 6B formed near a gate pad 3 and a unit cell 6A formed in a place except for the unit cell 6B. The unit cell 6B has constitution similar to the unit cell 6A by the impurity concentration of a p-base region 15b is higher than the p-base region 15 of the unit cell 6A. Since threshold voltage becomes higher than the unit cell 6A in the unit cell 6B, saturation current is difficult to flow in the unit cell 6B even if gate voltage which is the same as the unit cell 6A is applied. Consequently, gate oscillation near the gate pad 3 is reduced even in the load shorting state, and latch-up destruction can be prevented.
|
