| 摘要 |
PROBLEM TO BE SOLVED: To optimize respective characteristics of bipolar transistors of a semiconductor device which has the bipolar transistors in different structure mixedly mounted on the same semiconductor base. SOLUTION: The semiconductor device 73 is constituted by mounting 1st and 2nd bipolar transistors 71 and 72 mixedly on the same semiconductor base 47, a base area 54 of the 2nd bipolar transistor 72 is formed of an epitaxial layer and emitter areas 50, and 55 of the 1st bipolar transistor 71 and 2nd bipolar transistor 72 are formed through openings 59 and 61 formed in an insulating film (two-layer film of 57 and 58) and an insulating film 58 by different processes.
|
