发明名称 |
IMPURITY DIFFUSION METHOD TO SEMICONDUCTOR SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To uniformly diffuse impurities to a semiconductor substrate from a solid impurity source in a diffusion batch. SOLUTION: When a disk-like solid impurity 1 and a pair of semiconductor substrates 2a and 2b whose rears are arranged, so that the back to back are alternately placed on a wafer board 4 for heating in a furnace, the interval between an interval L1 between a semiconductor substrate that is arranged at the side of a furnace opening 5 in the pair of semiconductor substrates and a solid impurity source and an interval L2 between the semiconductor substrate, that is arranged at the side of a gas introduction opening 6 and the solid impurity source is provided, so that the relation L1>L2 is achieved.
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申请公布号 |
JP2003151912(A) |
申请公布日期 |
2003.05.23 |
申请号 |
JP20010352775 |
申请日期 |
2001.11.19 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
GUNJI HIROYUKI;UTSUNOMIYA SATORU |
分类号 |
H01L21/223;(IPC1-7):H01L21/223 |
主分类号 |
H01L21/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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