| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device, capable of securing an electric charge quantity during transfer using a simple constitution and suppressing the occurrence of residual electric charges, without being transferred. SOLUTION: A plurality (four, in this case) of transfer electrodes 13A to 13D are provided along the extending direction of a transfer channel layer 11 on an insulating film 12 on the surface of a silicon substrate 10. Thick wall parts 12A are formed, corresponding to gap regions G between the transfer electrodes 13A to 13D on the insulating film 12. The thick wall parts 12A have a shape, curved vertically from the surface of the silicon substrate 10, and the transfer electrodes adjacent to them are arranged, so as to be raised upwardly along the curved surface R of the thick wall parts 12A. The distance between a part in the neighborhood of the end of each transfer electrode 13A to 13D is larger than that at the other parts on a flat part. Thus, despite of forming the transfer channel layer 11 being shallow, the field strength between the transfer electrodes can be at grade and the transfer efficiency of the electric charge is improved.
|
