发明名称 LASER IRRADIATION APPARATUS AND METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method and an apparatus, that make uniform the energy distribution of a laser beam to an irradiation surface and uniformly apply the laser beam the entire irradiation surface, and further, to provide a manufacturing method of a semiconductor device where the laser irradiation method is included in the process. SOLUTION: The shape of a plurality of laser beams on an irradiation surface is formed into an elliptic or rectangular shape, the plurality of laser beams are applied, while the irradiation surface is being moved in a first direction, the irradiation surface is moved in a second direction, and the plurality of laser beams are applied, while the irradiation surface is being moved in a direction opposite to that of the first one. Additionally, the plurality of laser beams are applied, while the irradiation surface is being moved in the first direction, the plurality of laser beams are applied, while the irradiation surface is being moved in the direction opposite to that of the first, and the irradiation surface may be moved in the second direction.
申请公布号 JP2003151916(A) 申请公布日期 2003.05.23
申请号 JP20020225628 申请日期 2002.08.02
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TANAKA KOICHIRO;YAMAZAKI SHUNPEI
分类号 H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L21/268 主分类号 H01L21/20
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