发明名称 BIAS VOLTAGE GENERATING CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a bias voltage generating circuit capable of supplying a bias voltage at a low power voltage and wide power voltage range, and realizing low power consumption, and suppressing any influence due to the fluctuation of a manufacturing process or the fluctuation of a operating temperature condition. SOLUTION: Resistances R1 and R2 and a diode-connected MOS transistor ML1 are serially connected between a power voltage Vdd and a common potential line, and an MOS transistor M2 is serially connected to the resistance element R2 so that any influence due to the fluctuation of a manufacturing process can be cancelled by the fluctuation of the threshold voltage of the transistor ML1, and that any influence due to the fluctuation of the power voltage can be cancelled by the change of the on-resistance of the transistor M2. A bias voltage Vbs to be outputted from the connection of the resistance elements R1 and R2 is supplied to the gate of the current source transistor of a differential amplifier circuit so that stable operating characteristics can be realized without being affected by the fluctuation of the threshold voltage of the transistor or the fluctuation of the temperature or the power voltage.
申请公布号 JP2003150258(A) 申请公布日期 2003.05.23
申请号 JP20010345201 申请日期 2001.11.09
申请人 SONY CORP 发明人 TACHIMORI HIROSHI
分类号 H01L27/04;G05F3/24;H01L21/822;(IPC1-7):G05F3/24 主分类号 H01L27/04
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