摘要 |
<p>In one embodiment, the invention includes first (104) and second (118) transmission lines fabricated in a redistribution layer over a semiconductor die (100). The first transmission line (104) has a first distance from a first ground return path formed in a first metal level. The first transmission line (104) has a first impedance corresponding to the first distance. In other words, the impedance of the first transmission line (104) is affected by the distance between the first transmission line (104) and the first ground return path. Similar to the first transmission line (104) , the second transmission line (118) has a second distance from a second ground return path formed in a second metal level. The second transmission line (118) has a second impedance corresponding to the second distance. In other words, the impedance of the second transmission line (118) is affected by the distance between the second transmission line (118) and the second ground return path.</p> |