| 摘要 |
The present invention provides a semiconductor device and a manufacturing method capable of preventing penetration of plasma with impurities into an interface between an inter-layer insulation layer and a diffusion barrier, thereby reducing degradation of the capacitor properties and increasing production yield. The inventive semiconductor device, including: a capacitor formed on a top portion of a semiconductor substrate, wherein the capacitor includes a bottom electrode, a dielectric layer and a top electrode; an Iridium (Ir) capping layer formed on the top electrode of the capacitor; an inter-layer insulation layer for covering the capacitor and the Ir capping layer; a Ti layer for preventing plasma with impurities from penetrating into the capacitor through a contact hole, wherein the Ti layer is contacted with the inter-layer insulation layer exposed on lateral sides of the contact hole and the Ir capping layer exposed on a lower side of the contact hole; and a metal line formed on the Ti layer.
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