| 摘要 |
A heating apparatus which is installed in a low pressure CVD system or annealing equipment for use in semiconductor integrated circuit manufacturing processes for heat-treating wafers on which IC's are to be formed, wherein wafers are uniformly heated, the temperature of wafers is rapidly raised and lowered, and wafers are processed in high volume, wherein the apparatus comprises a cylindrical body made of glass-like carbon placed inside a reactor, and a high-frequency induction coil which is placed outside the reactor and is for causing the cylindrical body made of glass-like carbon to produce heat and thereby heating wafers in the reactor.
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