发明名称 |
STACKED FILL STRUCTURES FOR SUPPORT OF DIELECTRIC LAYERS |
摘要 |
Disclosed is a semiconductor device comprising: a multiplicity of wiring levels, each wiring level comprising conductive wires and a multiplicity of conductive fill shapes embedded in a dielectric; at least some of the fill shapes in at least two adjacent wiring levels being co-aligned; and where the fill shapes on adjacent levels are aligned, one or more conductive vias extending between and joining each co-aligned fill shape in each adjacent wiring level. The joined fill shapes serve to reinforce and support the dielectric, which may be a non-rigid or low-k dielectric. |
申请公布号 |
US2003094696(A1) |
申请公布日期 |
2003.05.22 |
申请号 |
US20010991769 |
申请日期 |
2001.11.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DUNHAM TIMOTHY G.;LANDIS HOWARD S.;MOTSIFF WILLIAM T. |
分类号 |
H01L23/00;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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