CAPACITOR OF SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to improve an electrical characteristic of a semiconductor memory device by preventing the reliability of the device from being decreased by a leakage current and dielectric loss and by making the characteristic not deteriorated by volatilization of a bismuth component in a high temperature heat treatment process. CONSTITUTION: The first electrode is formed on a substrate(21). A ferroelectric(29) including bismuth is formed on the first electrode. A rapid thermal process is performed to crystallize the ferroelectric including the bismuth. The second electrode is formed on the ferroelectric including the bismuth. An amorphous bismuth oxide layer(30) is formed between the first electrode and the ferroelectric including the bismuth or between the ferroelectric including the bismuth and the second electrode.