Semiconductor device and manufacturing method of the same

摘要

Concave portions and convex portions are formed on an insulating layer. First bit lines are arranged on the convex portions. A width of the first bit lines is set to L, and a space between the first bit lines is set to L+2S. Each of the first bit lines is electrically connected to a drain diffusion layer by a contact plug. Second bit lines are arranged in a trench between the first bit lines. A width of the second bit lines is set to L, and a space between the first and second bit lines is equal to a width S of a side wall. Each of the second bit lines is electrically connected to a drain diffusion layer by a contact plug.