| 摘要 |
The present invention provides Levenson masks capable of minimizing the effect of optical proximity, and a method for forming a fine pattern using these Levenson masks. Levenson masks 10 and 20 have patterns where shielding regions 111-114 are sandwiched between shifter regions 121-123 and non-shifter regions 131-134, respectively. The shifter regions 121-123 and the non-shifter regions 131-134 are formed to have predetermined shapes to minimize the effect of optical proximity. Specifically, aperture widths 141-147, which are defined as widths of the shifter regions 121-123 and widths of the non-shifter regions 131-134 perpendicular to the longitudinal directions of the linear shielding regions 111-114, are predetermined width for minimizing the effect of optical proximity. The Levenson masks 10 and 20 have different patterns from each other and are used for multiple exposures. |
