FIELD EFFECT TRANSISTOR SENSOR

摘要

The invention relates to a sensor, especially for the probe of a screen probe microscope, for examining probe surfaces or areas adjacent to the sensor, comprising at least one field effect transistor (FET) made of at least one semiconductor material. The invention also relates to a hall sensor made of at least one semiconductor material for detecting magnetic fields and whose lateral resolution capacity can be electrically adjusted, in addition to a semiconductor electrode whose electrode surface can be electrically adjusted.