DIELECTRIC CERAMIC COMPOSITION

摘要

PURPOSE: Provided is a dielectric ceramic composition applied to electrical and electronic devices, especially multilayer chip LC filters, which has high dielectric constant and low dielectric loss, and enables simultaneous sintering of ceramic and electrode by adding glass frit, and optionally oxides and/or CuO to conventional dielectric materials. CONSTITUTION: The dielectric ceramic composition is expressed by a composition formula: a wt.%{xZrO2 - yZnO - wNb2O5 - zTiO2} +c wt.%(glass frit), wherein 5.0mol%<=x<=45.0mol%, 1.5mol%<=y<=19.0mol%, 1.5mol%<=w<=19.0mol%, 40.0mol%<=z<=59.0mol%, x+y+w=z=100, 75.0<=a<=97.0, and 3.0<=c<=25.0. Also, less than 1.5wt.% of one or more of MgO, CoO, SiO2, Sb2O3, Sb2O5, MnO2 and TaO2, and/or 0.5wt.% of CuO are optionally added to the above dielectric composition. The glass frit of the ZnO-B2O3-SiO2-PbO system contains 30-70wt.% of ZnO, 5-30wt.% of B2O3, 5-40wt.% of SiO2 and 2-40wt.% of PbO. The resultant dielectric ceramic composition, enabling simultaneous sintering of ceramic and Ag-electrode at the temperature less than 900deg.C, has dielectric constant more than 30, Q value more than 1000(at 3GHz), a temperature coefficient of the resonant frequency(TCF) of±20.0ppm/deg.C.