| 摘要 |
PURPOSE: A method for fabricating a photodiode is provided to merge the photodiode with a preamplifier as a peripheral apparatus of the photodiode by using a complementary metal oxide semiconductor(CMOS) process, and to increase photo efficiency by broadening a depletion area between an N-well and a P-well and deepening a well junction. CONSTITUTION: A pad oxide layer(12), a pad nitride layer(13) and the first photoresist pattern(14) are sequentially formed on a P-type substrate(11). The pad nitride layer is eliminated by an etch process using the first photoresist pattern as an etch mask. An N-well(15) is formed on the P-type substrate through an N-well ion implantation process and the first photoresist pattern is removed. A thermal oxide layer(16) is formed only on the N-well through a thermal oxide process. After the pad nitride layer is removed, the second photoresist pattern(17) is formed. After a P-well(18) is formed on the P-type substrate through a P-well ion implantation process, the second photoresist pattern is eliminated. An interlayer dielectric(19) is formed on the resultant structure. An N-well metal interconnection(21N) and a P-well metal interconnection(21P) are connected to the N-well and the P-well, respectively.
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