发明名称 |
Method of forming ultra shallow junctions |
摘要 |
A method for forming a shallow junction in a semiconductor wafer may include amorphizing the wafer to obtain a depth of end-of-range (EOR) defects that is smaller than a desired junction depth in a range of about 13 nm to about 50 nm, implanting a dopant material into the wafer at a selected dose and energy to produce the desired junction depth, and activating the dopant material by thermal processing of the semiconductor wafer at a selected temperature for a selected time consistent with low-temperature solid phase epitaxy (SPE) annealing to form the shallow junction. The control of the EOR depth through a preamorphizing implant to less than the junction depth provides for a low leakage junction and the low-temperature SPE anneal prevents diffusion of the dopant beyond the desired junction depth.
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申请公布号 |
US2003096490(A1) |
申请公布日期 |
2003.05.22 |
申请号 |
US20020156981 |
申请日期 |
2002.05.29 |
申请人 |
BORLAND JOHN;FELCH SUSAN;FANG ZIWEI;KOO BON-WOONG |
发明人 |
BORLAND JOHN;FELCH SUSAN;FANG ZIWEI;KOO BON-WOONG |
分类号 |
H01L21/20;H01L21/223;H01L21/265;H01L21/336;H01L29/78;(IPC1-7):H01L21/336;H01L21/26;H01L21/42;H01L21/425 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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