THIN SILICON MICROMACHINED STRUCTURES

摘要

Methods for making thin silicon layers 20 suspended over recesses 30 in glass wafers or substrates 22 are disclosed. One embodiment of the present invention includes providing a thin silicon wafer 20, and a glass wafer or substrate 22. Recesses 30 are formed in one surface 24 of the glass wafer 22, and electrodes 38 are formed in the recesses 30. The silicon wafer 20 is then bonded to the glass wafer 22 over the recesses 30. The silicon wafer 20 is then etched to impart the desired suspended or silicon wafer structure. In another embodiment of the present invention, the silicon wafer 120 has a patterned metal layer 129. The silicon wafer 120 is bonded to the glass wafer 22, with the patterned metal layer 129 positioned adjacent the recesses 30 in the glass wafer 22. The silicon wafer 120 positioned adjacent the recesses 30 in the glass wafer 22. The silicon wafer 120 is selectively etched down to the metal layer 129. The metalized layer 129 may serve to seal gasses within the recessed cavities 30 of the glass wafer 22 during the silicon etching process. The metal layer 129 can then be subsequently removed.