Production of a semiconductor component comprises preparing an insulating layer for a hard mask on an etching layer, forming a sacrificial layer on the insulating layer, and further processing

摘要

Production of a semiconductor component comprises preparing an insulating layer for a hard mask on an etching layer (51A); forming a sacrificial layer (53A) on the insulating layer (52A); forming a photoresist layer on the sacrificial layer; and forming a sacrificial hard mask by etching the sacrificial layer with the photoresist pattern as etching mask. A hard mask is formed by etching the insulating layer with the sacrificial hard mask as etching mask. A predetermined number of patterns are prepared from the etching layer using the sacrificial hard mask and the hard mask as etching masks. Preferred Features: The etching layer is a conducting layer and the patterns correspond to a word line, bit line or metal line. The photoresist pattern is produced using an ArF or F2 light source.