发明名称 |
Method of manufacturing thin film transistor |
摘要 |
A method of manufacturing a thin film transistor includes forming a semiconductor layer on a substrate; forming a gate insulating layer over the entire surface of the substrate to cover the semiconductor layer; depositing a conductive layer on the gate insulating layer; forming a first photosensitive pattern over the conductive layer; patterning the conductive layer according to the photosensitive pattern to form a gate electrode; and ion-doping an impurity into the semiconductor layer using the photosensitive pattern as a mask to form source and drain regions.
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申请公布号 |
US2003096458(A1) |
申请公布日期 |
2003.05.22 |
申请号 |
US20020166367 |
申请日期 |
2002.06.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK SANG-IL;YOO KYUNG-JIN;CHOI KYU-HWAN |
分类号 |
H01L29/786;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/49;(IPC1-7):H01L21/00 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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