发明名称 Method of manufacturing thin film transistor
摘要 A method of manufacturing a thin film transistor includes forming a semiconductor layer on a substrate; forming a gate insulating layer over the entire surface of the substrate to cover the semiconductor layer; depositing a conductive layer on the gate insulating layer; forming a first photosensitive pattern over the conductive layer; patterning the conductive layer according to the photosensitive pattern to form a gate electrode; and ion-doping an impurity into the semiconductor layer using the photosensitive pattern as a mask to form source and drain regions.
申请公布号 US2003096458(A1) 申请公布日期 2003.05.22
申请号 US20020166367 申请日期 2002.06.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK SANG-IL;YOO KYUNG-JIN;CHOI KYU-HWAN
分类号 H01L29/786;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/49;(IPC1-7):H01L21/00 主分类号 H01L29/786
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