CLADDING MRAM MULTIPLE MAGNETIC LAYER DEVICE

摘要

A cladded conductive interconnect (5) for programming a magnetoresistive memory device (10) which includes a conductive material (7) with a length, a first barrier conductive material (9) positioned on the conductive material, and a multi-layer cladding region (14) positioned along the length of the conductive material wherein the multi-layer cladding region includes N ferromagnetic layers (11,15), where N is a whole number greater than or equal to two, and wherein the multi-layer cladding region further includes at least one spacer layer, wherein the spacer layer (13) can include a metal, an insulator, or an exchange interaction material, and wherein the spacer layer is sandwiched therebetween each adjacent ferromagnetic layer.