| 摘要 |
To eliminate in structure a parasitic capacity formed between a polycrystalline silicon film resistor and a semiconductor substrate, and to provide a battery voltage detecting circuit capable of surely detecting a battery voltage. A layer such as a well which is insulated from a semiconductor substrate is disposed on the semiconductor substrate just below a polycrystalline silicon film resistor, and a potential of the layer is set to be a stable potential which is not influenced by a potential of the polycrystalline silicon film resistor or a detecting operation of a battery. With this structure, no parasitic capacity is eliminated in structure, thereby being capable of surely detecting the battery voltage.
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