| 摘要 |
Disclosed is a method of manufacturing an image sensor having light sensitivity over a photodiode equal in area to that of a unit pixel. The image sensor includes an image sensor comprising: a first semiconductor substrate doped with a first conductive dopant; a first diffusion layer formed in the semiconductor substrate and doped with a second conductive dopant; a second diffusion layer formed in the semiconductor substrate adjacent the first diffusion layer and having a width wider than a width of the first diffusion layer; a third diffusion layer doped with the first conductive dopant and formed at an exposed surface of the semiconductor substrate in the first diffusion layer; a gate electrode formed on the exposed surface and having a first edge adjacent to the third diffusion layer; and a fourth diffusion layer doped with the second conductive dopant and formed at the exposed surface adjacent a second edge of the gate electrode, the fourth diffusion layer defining a gap with the second diffusion layer.
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