发明名称 |
Lateral bipolar transistor and method for producing the same |
摘要 |
A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first insulative region; a second insulative region formed so as to substantially cover the first semiconductor region; and a second semiconductor region of a second conductivity type different from the first conductivity type, a second semiconductor region being selectively formed, wherein: the second insulative region has a first opening which reaches a surface of the first semiconductor region, and the first semiconductor region has a second opening which reaches the underlying first insulative region, the second opening being provided in a position corresponding to the first opening of the second insulative region; the second semiconductor region is formed so as to fill the first opening and the second opening, thereby functioning as a base region; a lower portion of the second semiconductor region which at least fills the second opening is formed by lateral growth from a face of the first semiconductor region defining a side wall of the second opening; and the first semiconductor region includes an emitter region and a collector region formed therein.
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申请公布号 |
US2003096478(A1) |
申请公布日期 |
2003.05.22 |
申请号 |
US20020300440 |
申请日期 |
2002.11.20 |
申请人 |
MATSUNO TOSHINOBU;FUKUDA TAKESHI;NISHII KATSUNORI;INOUE KAORU;UEDA DAISUKE |
发明人 |
MATSUNO TOSHINOBU;FUKUDA TAKESHI;NISHII KATSUNORI;INOUE KAORU;UEDA DAISUKE |
分类号 |
H01L21/331;H01L29/165;H01L29/73;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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