| 摘要 |
A method for manufacturing a vertical Schottky diode with a guard ring on a lightly-doped N-type silicon carbide layer, comprising the steps of forming a P-type epitaxial layer on the N-type layer; implanting N-type dopants in areas of the P-type epitaxial layer to neutralize in these areas, across the entire thickness of the epitaxial layer, the P-type dopants to form N-type regions, of dopant concentration lower than that of the epitaxial layer, and delimiting a P-type guard ring; forming on the external periphery of the component an insulating layer partially covering the guard ring; and forming a Schottky contact with the N-type region internal to the guard ring.
|
