| 摘要 |
PURPOSE: A structure for fabricating a semiconductor device is provided to form a merged structure of a MOS transistor and an ONO capacitor or a MOS capacitor and the ONO capacitor by improving a structure of the semiconductor device. CONSTITUTION: The first doped layer(42) and the second doped layer(43) are formed by implanting N-type or P-type ions of high density on a part of a semiconductor substrate(41) having a P-well or an N-well. The first insulating layer(44) is formed on the semiconductor substrate between the first doped layer and the second doped layer. The first conductive layer(45) is formed on the first insulating layer. The second insulating layer(46) is formed on the first conductive layer. The second conductive layer(47) is formed on the second insulating layer. A plurality of wires(48a,48b,48c,48d) are formed on the first doped layer, the second doped layer, the first conductive layer, and the second conductive layer, respectively.
|
