发明名称 |
SELECTIVELY CONTROLLABLE GAS FEED ZONES FOR A PLASMA REACTOR |
摘要 |
A gas distribution system for improving asymmetric etching and deposition control over a substrate diameter in a plasma reactor including a plasma reactor chamber further comprising a substrate holder for holding a substrate surface disposed in a lower portion of said plasma reactor; at least one gas distributor disposed within the plasma reactor chamber for distributing reactant gases said at least one gas distributor including a plurality of gas feed zones in communication with at least one gas source for selectively delivering a gas flow independently to at least one of the plurality of gas feed zones.
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申请公布号 |
US2003094903(A1) |
申请公布日期 |
2003.05.22 |
申请号 |
US20010003492 |
申请日期 |
2001.11.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
TAO JHUN-JAN;LIN HUAN-JUST;LIANG MONG-SONG |
分类号 |
C23C16/44;C23C16/455;H01J37/32;(IPC1-7):H01J7/24 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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