发明名称 SELECTIVELY CONTROLLABLE GAS FEED ZONES FOR A PLASMA REACTOR
摘要 A gas distribution system for improving asymmetric etching and deposition control over a substrate diameter in a plasma reactor including a plasma reactor chamber further comprising a substrate holder for holding a substrate surface disposed in a lower portion of said plasma reactor; at least one gas distributor disposed within the plasma reactor chamber for distributing reactant gases said at least one gas distributor including a plurality of gas feed zones in communication with at least one gas source for selectively delivering a gas flow independently to at least one of the plurality of gas feed zones.
申请公布号 US2003094903(A1) 申请公布日期 2003.05.22
申请号 US20010003492 申请日期 2001.11.20
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD 发明人 TAO JHUN-JAN;LIN HUAN-JUST;LIANG MONG-SONG
分类号 C23C16/44;C23C16/455;H01J37/32;(IPC1-7):H01J7/24 主分类号 C23C16/44
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