Capacitor having a structure capable of restraining deterioration of dielectric film, semiconductor device having the capacitor and method of manufacturing the same

摘要

Disclosed is a semiconductor device having a structure capable of restraining deterioration of a dielectric film (BSTO) of a capacitor even when annealing is performed in a hydrogen-containing atmosphere. This semiconductor device comprises a plurality of dispersion electrodes (SRO) formed in a dispersed manner above a semiconductor substrate, and a common electrode commonly facing the dispersion electrodes via respective dielectric films (BSTO). This common electrode includes a lower conductive layer (SRO) formed on the dielectric films, a barrier layer (Al2O3) formed on the lower conductive layer and an upper conductive layer (Al) formed on the barrier layer.