| 摘要 |
<p>The invention concerns a magnetic device with magnetic tunnel junction, memory array and read/write methods using same. Said device (8) comprises a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b). The temperature blocking the storage layer magnetization is lower than that of the reference layer. The device also comprises means (22, 24) for heating the storage layer beyond the temperature blocking its magnetization and means (26) for applying thereto a magnetic field (34) orienting its magnetization relative to that of the reference layer without modifying the orientation of the latter.</p> |
