| 摘要 |
<p>An integrated semiconductor device comprising a laser (200) on a substrate (16), the laser (200) having an active layer (18) and a current-induced grating (20), such as a current-injection complex-coupled grating, within a laser cavity producing a single-mode output light signal at high data rates (> 622 Mb/sec) in isolator-free operation. The grating (20) has a coupling strength product 6L greater than 3, where 6 is the coupling coefficient and L is the length of the laser cavity. In certain embodiments, the laser (200) is a distributed feedback (DFB) laser (200) that emits light at a wavelength of about 1.5 :m. The strong current-induced grating (20) prevents mode hopping between multiple degenerate Bragg modes. The laser (200) is also characterized by excellent immunity from optical feedback, and can be operated without an isolator at high data rates.</p> |
