发明名称 Semiconductor device
摘要 In order to improve the robustness against electrostatic discharge, when power source terminal and ground terminal are open, of a semiconductor device having a first, a second and a third inverter that are connected in a cascade arrangement, the semiconductor device is provided not only with a first input protection circuit for guiding positive electrostatic discharges, that are applied from outside to a signal input terminal, to a power source line, and a second input protection circuit for guiding negative electrostatic discharges, that are applied from outside to the signal input terminal, to a ground line, but also an internal protection circuit for guiding electrostatic discharges that have been guided by the first input protection circuit to the power source line and flow from a P-channel MOS transistor in the second inverter towards the third inverter, to the ground line.
申请公布号 US2003094969(A1) 申请公布日期 2003.05.22
申请号 US20020294761 申请日期 2002.11.15
申请人 MATSUSHITA ELECTRIC CO., LTD. 发明人 TATEHARA KENICHI;KINUGASA NORIHIDE
分类号 H01L21/822;H01L21/8249;H01L23/60;H01L23/62;H01L27/02;H01L27/04;H01L29/74;H02H9/00;H03K19/00;H03K19/003;(IPC1-7):H03K19/003 主分类号 H01L21/822
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