| 摘要 |
An unbalanced magnetron rotable about the back of a sputtering target and including a nested magnetron part having an outer magnetic pole of a first magnetic polarity surrounding an inner magnetic pole of an opposed second magnetic polarity and an auxillary magnet increasing the unbalance and adjusting the uniformity of sputtering. In a first embodiment, the auxiliary magnet is horizontally magnetized and placed between the inner pole and the portion of the outer pole near the target periphery. This embodiment most strongly affects the sputtering erosion pattern near the target periphery. In a second embodiment, the auxiliary magnet is vertically magnetized and placed on an opposite side of the rotation axis from the major portion of the nested magnetron part. This embodiment most strongly affects the vertical magnetic field distribution near the wafer and can produce a more uniform magnetic field at the wafer. The two embodiments can be combined. |
