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发明名称
Verfahren zur Herstellung eines Halbleiter-MOS-Transistors
摘要
申请公布号
DE4415955(C2)
申请公布日期
2003.05.22
申请号
DE19944415955
申请日期
1994.05.05
申请人
LG SEMICON CO. LTD., CHEONGJU
发明人
LEE, CHANG-JAE;KIM, JAE-JEONG
分类号
H01L21/3213;H01L21/336;H01L29/78;(IPC1-7):H01L21/336
主分类号
H01L21/3213
代理机构
代理人
主权项
地址
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