METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL

摘要

After the surface of a Si substrate 1 has been pretreated, an SiGeC layer 2 is formed on the Si substrate 1 using an ultrahigh vacuum chemical vapor deposition (UHV-CVD) apparatus. During this process step, the growth temperature of the SiGeC layer 2 is set at 490 DEG C or less and Si2H6, GeH4 and SiH3CH3 are used as Si, Ge and C sources, respectively, whereby the SiGeC layer 2 with good crystallinity can be formed.