| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a defect correcting method which has no problem as to quality, operation efficiency and a yield even if it is difficult to correct a pattern having connected black defects into a normal shape to correct a photomask of large size such as a working pattern plate for shadow mask production and a mask pattern plate for forming it or a photomask for semiconductor device production. SOLUTION: By the defect correcting method, the black defect connecting with the pattern part of a patterned substrate is removed and corrected by irradiation with a laser beam; and a photographed image of the circumference of the defect is processed to display a correction line as an index of correction over a defect part image in piles at an image display part and the defect part is corrected along the correction line. Further, a laser beam irradiation opening for correction as an index of an irradiated area is displayed outside the pattern along the correction line and then set to a laser beam irradiation opening guide line for correction and the irradiation with the laser beam is repeated along the correction line.</p> |
