Method and structure for DC and RF shielding of integrated circuits

摘要

A method for DC and RF shielding of circuits which combine to form an integrated circuit device. Isolated silicon islands 50 on the chip, which may include at least one having an analog circuit and at least one having a digital circuit, are surrounded laterally 56 and subjacently 54 by conductive material. They may be covered individually (fig. 12: 80) or as a group by a conductive layer. The method includes providing a first semiconductor substrate 2 and hydrophilically bonding a substructure to the substrate. The substructure includes the isolated silicon islands surrounded by the conductive material, and may be formed on a second semiconductor substrate by implanting an impurity region into an upper portion of the second semiconductor substrate (fig. 3: 14). The bulk of the second substrate is separated from the substructure, preferably along a crack propagated by heat along the boundary of the ion-implanted layer. An insulating layer is formed over the silicon islands, then a conductive cover layer and sidewalls are formed surrounding the islands.