| 摘要 |
<p>A polysilicon diode antifuse (2) is arranged on an insulator (6) (e.g. SiO 2 ) above a substrate (12) (e.g. silicon). The antifuse (2) may be produced by depositing a layer of undoped or lightly doped polysilicon (4) on a layer of silicon dioxide (6) on a semiconductor wafer (12), p+ doping one region of the polysilicon (10), and n+ doping another region of the polysilicon (8), but leaving an undoped or lightly doped gap region between the heavily doped regions (8) and (10). Electrical connections A and C are then formed to the p+ and n+ regions (8) and (10). The polysilicon layer (4) may be photoprinted and etched into an elongate shape, with p+ (10) and n+ (8) regions at opposite ends, and the spacing between these regions being about 0.5žm. A thin dielectric layer of silicon dioxide may be added to the polysilicon (4) to prevent implant channelling. The dopants may be electrically activated by application of a heat cycle to enable diffusion.</p> |
