发明名称 METHOD OF DEPOSITING DEPOSITED FILM, AND SYSTEM OF DEPOSITING DEPOSITED FILM
摘要 PROBLEM TO BE SOLVED: To provide a method of depositing a deposited film which is suitable for the industrial production by a cluster ion beam deposition method, and is also appropreate even in the case the raw material consists of a organic matter, and to provide a system therefor. SOLUTION: The method of depositing a deposited film has an evaporation stage where the raw material of a deposited film is evaporated in a vacuum vessel, an atomization stage where the vapor of the raw material is atomized, an ionization stage where the particulates are ionized, and a film deposition stage where the evaporated raw material made into the ionized particulates is fed to the surface of the substrate to be film-deposited, so that the deposited film is deposited. In this method, the ionization stage has a stage where the raw material made into the particulates is contacted with a rare gas in a metastable excitation state. In the system of depositing a deposited film where a deposition film is deposited on the substrate to be film-deposited in a vacuum vessel, a vacuum vessel provided with an exhaust means, an evaporation means for evaporating the raw material of the deposition film provided in the vacuum vessel, and an excitation rare gas feed means for feeding a rare gas in a metastable excitation state at least to one part of a space held between the evaporation means and the substrate to be film-deposited are provided.
申请公布号 JP2003147515(A) 申请公布日期 2003.05.21
申请号 JP20010341900 申请日期 2001.11.07
申请人 CANON INC 发明人 KOIKE ATSUSHI;YAMAGUCHI HIROTO;KANAI MASAHIRO
分类号 C23C14/32;H01L21/363;(IPC1-7):C23C14/32 主分类号 C23C14/32
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