Monolithically integrated pin diode and schottky diode circuit and method of fabricating same

摘要

A Microwave/Millimeter-wave Monolithic Integrated Circuit (MMIC) device (100) including PIN diode and Schottky diode circuits (102, 104) provides improved performance with a reduced cost of manufacture. The planar, glass-passivated, MMIC device is fabricated in silicon technology and includes mesa isolation (110,112) between the PIN diode (102) and the Schottky diode (104). The PIN and Schottky diodes include respective anode regions (122,116) having different thicknesses and resistivity for implementing the PIN and Schottky diode functions. Furthermore, the Schottky anode region (116) is formed relatively late in the process for fabricating the Si MMIC device to allow the Schottky anode region (116) to be formed in approximately the same plane as the PIN anode region (122) and to allow precise control of the relative thicknesses of the PIN and Schottky anode regions.