发明名称 SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target which ensures efficient sputtering by suppressing peeling of the target during sputtering and a sputtering target with a backing plate. SOLUTION: This sputtering target is a sputtering target consisting of metal or alloy and is formed by grooving the bonding surface of the target. The depth of the grooves formed on the bonding surface of the target by the grooving ranges preferably from 0.2 to 1.0 mm, the width from 0.5 to 20 mm and the center pitch from 10 to 200 mm. As a result, a stable electric discharge can be assured and the sputtering down to the depth of the target excluding the thickness of the grooved sections is possible.
申请公布号 JP2003147518(A) 申请公布日期 2003.05.21
申请号 JP20010340651 申请日期 2001.11.06
申请人 MITSUI MINING & SMELTING CO LTD 发明人 ONO NAOKI
分类号 C23C14/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
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