发明名称 PATTERN FORMING METHOD AND BILAYER FILM FOR PATTERN FORMATION
摘要 PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a dense pattern independently of standing waves and capable of further forming a resist pattern having a high aspect ratio by using an underlayer film excellent in dry etching resistance and usable as a thin film in combination with a specified polysiloxane-base radiation-sensitive resin composition having high transparency at <=193 nm wavelength, and to provide a bilayer film for pattern formation. SOLUTION: In the pattern forming method, a coating film comprising a radiation-sensitive resin composition comprising an acid-dissociable group- containing polysiloxane which is made alkali-soluble when the acid-dissociable group is dissociated is formed on an underlayer film comprising a polymer having >=80 wt.% carbon content and a weight average molecular weight (expressed in terms of polystyrene) of 500-100,000 and irradiation with radiation is carried out. The bilayer film for pattern formation is obtained by forming a coating film comprising the radiation-sensitive resin composition on the underlayer film.
申请公布号 JP2003149820(A) 申请公布日期 2003.05.21
申请号 JP20020244094 申请日期 2002.08.23
申请人 JSR CORP 发明人 IWAZAWA HARUO;HAYASHI AKIHIRO;SHIMOKAWA TSUTOMU;KAWAGUCHI KAZUO;TANAKA MASATO
分类号 G03F7/075;C08F32/08;C08G10/02;C08G77/14;G03F7/039;G03F7/11;G03F7/26;H01L21/027 主分类号 G03F7/075
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