发明名称 |
PATTERN FORMING METHOD AND BILAYER FILM FOR PATTERN FORMATION |
摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a dense pattern independently of standing waves and capable of further forming a resist pattern having a high aspect ratio by using an underlayer film excellent in dry etching resistance and usable as a thin film in combination with a specified polysiloxane-base radiation-sensitive resin composition having high transparency at <=193 nm wavelength, and to provide a bilayer film for pattern formation. SOLUTION: In the pattern forming method, a coating film comprising a radiation-sensitive resin composition comprising an acid-dissociable group- containing polysiloxane which is made alkali-soluble when the acid-dissociable group is dissociated is formed on an underlayer film comprising a polymer having >=80 wt.% carbon content and a weight average molecular weight (expressed in terms of polystyrene) of 500-100,000 and irradiation with radiation is carried out. The bilayer film for pattern formation is obtained by forming a coating film comprising the radiation-sensitive resin composition on the underlayer film. |
申请公布号 |
JP2003149820(A) |
申请公布日期 |
2003.05.21 |
申请号 |
JP20020244094 |
申请日期 |
2002.08.23 |
申请人 |
JSR CORP |
发明人 |
IWAZAWA HARUO;HAYASHI AKIHIRO;SHIMOKAWA TSUTOMU;KAWAGUCHI KAZUO;TANAKA MASATO |
分类号 |
G03F7/075;C08F32/08;C08G10/02;C08G77/14;G03F7/039;G03F7/11;G03F7/26;H01L21/027 |
主分类号 |
G03F7/075 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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