SEMICONDUCTOR DEVICE, A METHOD OF MANUFACTURING THE SAME, AND A SEMICONDUCTOR DEVICE PROTECTIVE CIRCUIT

摘要

The present invention relates to a Schottky diode, and aims at providing a structure having no P-N junction while improving voltage resistance against a reverse bias in a Schottky diode employed in combination with an insulated gate semiconductor device in particular. In order to attain the aforementioned object, a P-type impurity region (12) having a surface exposed on a surface of an N-type semiconductor substrate (11) functioning as a drain for functioning as a channel region and a gate insulator film (32) covering it are provided. A gate electrode (53) is extended from above the gate insulator film (32) over a first taper of an oxide film (31). In a Schottky diode (103) rendering the semiconductor substrate (11) a cathode and having a boundary layer (14) as a Schottky region, on the other hand, an anode electrode (53) is extended from above the boundary layer (14) over a second taper of the oxide film (31) existing above an end portion of the boundary layer (14).