| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive photoresist composition capable of forming a high contrast thin film resist pattern, suppressing scumming and having good storage stability and heat resistance. SOLUTION: The positive photoresist composition comprises (A) a novolak resin containing >=20 mol% m-cresol repeating units and having 1-ethoxyethyl groups substituted for the hydrogen atoms of part of phenolic hydroxyl groups, (B) a quinonediazido-ester compound, e.g. of formula (1) and (C) 1,1-bis(4- hydroxyphenyl)cyclohexane. |
