| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-frequency transmitting material which eliminates the possibility of the self-heat generation by high frequencies, does not give rise to a process defect, does not contain impurities to exert and adverse influence on an object to be treated, such as a wafer, is excellent in corrosion resistance and is free of toxici ty and a method of manufacturing the high-frequency transmitting material which can manufacture the high-frequency transmitting material having such characteristics. SOLUTION: The high-frequency transmitting material is formed to be composed of a silicon carbide-base sintered compact of <=1,000 ppm in to total content of elements exclusive of silicon and carbon, <=100 ppm in the content of the free carbon, >=1×10<9> Ω.cm in volumetric resistivity value, and <=0.25 in dielectric dissipation factor tanδ. The manufacturing method comprises sintering a powder mixture consisting of 1 to 10 wt.% boron nitride powder and the balance silicon carbide powder of <=10,000 ppm in the content of the free carbon to obtain the silicon carbide-base sintered compact and removing the surface reaction layer of the silicon carbide-base sintered compact, then heat treating the silicon carbide-base sintered compact removed of the surface reaction layer at 1,900 to 2,200 deg.C in an inert atmosphere. |
