发明名称 |
Method for forming a silicide film on gate electrodes and diffusion layers of MOS transistors |
摘要 |
A silicide film is selectively formed at least on diffusion layers of a MOS transistor. In the method for forming the silicide film includes, a first metal film is selectively formed at least on diffusion layers. A first annealing is applied to allow at least the diffusion layers to react with the first metal film. A part of the sidewalls is removed to form a gap with reacted film of the first metal film. A second annealing is performed at a temperature higher than that of the first annealing to form a reacted film. This makes it possible to form a silicide film having preferable electric characteristics on a gate and diffusion layers being fine in dimension and high in impurity concentration, in a self-aligning fashion without producing "bite of silicide."
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申请公布号 |
US6566254(B1) |
申请公布日期 |
2003.05.20 |
申请号 |
US20000489355 |
申请日期 |
2000.01.21 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
MIKAGI KAORU |
分类号 |
H01L29/78;C23C18/31;H01L21/28;H01L21/285;H01L21/336;(IPC1-7):H01L21/44 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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