Method of manufacturing a semiconductor device and semiconductor device manufactured by the method

摘要

First, a hole pattern or a separation pattern of a first resist that is capable of supplying acid is formed on a semiconductor substrate. Then, a crosslinked film (organic frame) is formed on the side wall of the first resist pattern to obtain a resist pattern having a reduced hole diameter or separation width. Then, the hole diameter or the separation width is further reduced by causing thermal reflow of the crosslinked film. Finally, the semiconductor substrate is etched by using a resulting resist pattern as a mask.