Epitaxial silicon wafer, method for producing the same and subtrate for epitaxial silicon wafer

摘要

An epitaxial silicon wafer, which has no projections having a size of 100 nm or more and a height of 5 nm or more on an epitaxial layer, and a method for producing an epitaxial silicon wafer, wherein a single crystal ingot containing no I-region is grown when a silicon single crystal is grown by the CZ method, and an epitaxial layer is deposited on a silicon wafer sliced from the single crystal ingot and containing no I-region for the entire surface. An epitaxial wafer of high quality with no projection-like surface distortion observed as particles on an epi-layer surface is provided by forming a wafer having no I-region for the entire surface from a single crystal and depositing an epitaxial layer thereon, and a single crystal having no I-region for entire plane is produced with good yield and high productivity, thereby improving productivity of epi-wafers and realizing cost reduction.