发明名称 |
Integration of silicon etch and chamber cleaning processes |
摘要 |
A method for processing a substrate disposed in a substrate process chamber having a source power includes transferring the substrate into the substrate process chamber. A trench is etched on the substrate by exposing the substrate to a plasma formed from a first etchant gas by applying RF energy from the source power system and biasing the plasma toward the substrate. Byproducts adhering to inner surfaces of the substrate process chamber are removed by igniting a plasma formed from a second etchant gas including a halogen source in the substrate process chamber without applying bias power or applying minimal bias power. Thereafter, the substrate is removed from the chamber. At least 100 more substrates are processed with the etching-a-trench step and removing-etch-byproducts step before performing a dry clean or wet clean operation on the chamber.
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申请公布号 |
US6566270(B1) |
申请公布日期 |
2003.05.20 |
申请号 |
US20000662677 |
申请日期 |
2000.09.15 |
申请人 |
APPLIED MATERIALS INC. |
发明人 |
LIU WEI;WILLIAMS SCOTT;YUEN STEPHEN;MUI DAVID;SHEN MEIHUA |
分类号 |
H01L21/3065;H01L21/76;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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