| 发明名称 |
Method of forming a silicon oxide layer |
| 摘要 |
A silicon oxide layer is formed on a semiconductor wafer by performing a high temperature oxidation (HTO) process using dichlorosilane (SiH2Cl2) and nitrous oxide (N2O), as reacting gases, having a flow rates with a ratio greater than 2:1, respectively. The reacting moles of dichlorosilane to nitrous oxide are in the proportion of 1:2.
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| 申请公布号 |
US6566282(B2) |
申请公布日期 |
2003.05.20 |
| 申请号 |
US20010885048 |
申请日期 |
2001.06.21 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HUANG CHENG-CHIEH;LIU TSE-WEI;YU TANG |
| 分类号 |
H01L21/285;H01L21/31;H01L21/316;H01L21/469;(IPC1-7):H01L21/469 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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